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| IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G OptiMOSTM3 Power-Transistor Features * N-channel, normal level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) * 175 C operating temperature * Pb-free lead plating; RoHS compliant * Qualified according to JEDEC1) for target application * Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID 250 60 25 V m A * Ideal for high-frequency switching and synchronous rectification Type IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G Package Marking PG-TO263-3 600N25N PG-TO220-3 600N25N PG-TO262-3 600N25N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) 2) Value 25 18 100 210 20 Unit A I D,pulse E AS V GS P tot T j, T stg T C=25 C I D=25 A, R GS=25 mJ V W C T C=25 C 136 -55 ... 175 55/175/56 J-STD20 and JESD22 See figure 3 Rev. 2.2 page 1 2009-10-23 IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient R thJC R thJA minimal footprint 6 cm2 cooling area 3) 1.1 62 40 K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=90 A V DS=200 V, V GS=0 V, T j=25 C V DS=200 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance I GSS R DS(on) RG g fs |V DS|>2|I D|R DS(on)max, I D=25 A V GS=20 V, V DS=0 V V GS=10 V, I D=25 A 250 2 3 0.1 4 1 A V 24 10 1 51 2.5 47 100 100 60 nA m S 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) Rev. 2.2 page 2 2009-10-23 IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G Parameter Symbol Conditions min. Values typ. max. Unit Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 4) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 4) C iss C oss C rss t d(on) tr t d(off) tf V DD=100 V, V GS=10 V, I D=12 A, R G=1.6 V GS=0 V, V DS=100 V, f =1 MHz - 1770 112 3 10 10 22 8 2350 149 - pF ns Q gs Q gd Q sw Qg V plateau Q oss V DD=100 V, V GS=0 V V DD=100 V, I D=12 A, V GS=0 to 10 V - 8 2 5 22 4.3 45 29 60 nC V nC IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=25 A, T j=25 C V R=100 V, I F=12A , di F/dt =100 A/s - 1 127 604 25 100 1.2 - A V ns nC See figure 16 for gate charge parameter definition Rev. 2.2 page 3 2009-10-23 IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V 160 30 140 120 20 100 P tot [W] 80 60 10 40 20 0 0 50 100 150 200 I D [A] 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 103 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 102 10 s 1 s 100 101 1 ms Z thJC [K/W] 100 s 0.5 I D [A] 0.2 0.1 10 ms 10 -1 0.05 0.02 10 0 DC 0.01 single pulse 10-1 10 -1 10-2 10 0 10 1 10 2 10 3 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 2.2 page 4 2009-10-23 IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 60 10 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 100 50 7V 80 5V 4.5 V 5V 40 R DS(on) [m] 60 7V I D [A] 10 V 30 40 20 4.5 V 20 10 0 0 1 2 3 4 5 0 0 10 20 30 40 50 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 40 8 Typ. forward transconductance g fs=f(I D); T j=25 C 80 70 30 60 50 20 g fs [S] 175 C 25 C I D [A] 40 30 10 20 10 0 0 2 4 6 8 0 0 25 50 75 V GS [V] I D [A] Rev. 2.2 page 5 2009-10-23 IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=25 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 200 180 4 3.5 160 3 140 90 A 900 A R DS(on) [m] 120 100 80 60 40 20 0 -60 -20 20 60 100 140 180 98% 2.5 V GS(th) [V] typ 2 1.5 1 0.5 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 103 Ciss 103 102 Coss C [pF] 102 I F [A] 25 C 175 C 101 101 Crss 25C, 98% 175C, 98% 100 0 40 80 120 160 0 0.5 1 1.5 2 V DS [V] V SD [V] Rev. 2.2 page 6 2009-10-23 IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 100 14 Typ. gate charge V GS=f(Q gate); I D=12 A pulsed parameter: V DD 10 8 200 V 25 C 100 C 125 C 6 125 V V GS [V] I AS [A] 10 50 V 4 2 1 1 10 100 1000 0 0 10 20 30 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 290 V GS 280 Qg 270 V BR(DSS) [V] 260 250 V g s(th) 240 230 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 220 T j [C] Rev. 2.2 page 7 2009-10-23 IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G PG-TO220-3: Outline Rev. 2.2 page 8 2009-10-23 IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G PG-TO263-3: Outline Rev. 2.2 page 9 2009-10-23 IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G PG-TO262-3: Outline Rev. 2.2 page 10 2009-10-23 IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( www.infineon.com). on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2 page 11 2009-10-23 |
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